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TG-JVD Trace Nitrogen Gas Analyzer

Utilizing plasma emission spectroscopy technology, the TG-JVD analyzer employs intelligent digital processing to determine N₂ concentration. Designed for online analysis of N₂ impurities in inert gases (argon or helium) within industrial processes and scientific laboratories, it features high automation, powerful functionality, user-friendly operation, and digital communication capabilities.
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  • TG-JVD

● Atomic emission spectroscopy with high accuracy.

● High-frequency high-voltage ionization source ensures excellent stability without radioactive concerns.

● No consumable components, ensuring long instrument lifespan.

● High-precision MFC for sample gas flow control.

● Color LCD display with clear information presentation. Touchscreen operation for user-friendly experience.

● 4-20mA current loop output.


● Typical Range: 0~10×10-6 ; 0~100×10-5

● Operating Temperature: (5-40)℃

● Stability: ± 1% FS/24h

● Repeatability: 0.5%

● Linearity Deviation: ± 1% FS

● Response Time (Tgo): ≤30s

● Sample Gas Temperature: 5~40℃

● Sample Gas Flow Rate: 50 mL/min~150mL/min

● Moisture Content: Dew Point ≤4℃

● Particulate Content: ≤0.1um

● Free from Impurity Gases (O2, CH4, H2, CO)


1.Metal Smelting & Welding

Special steel smelting: Nitrogen impurities in argon during AOD furnace refining or rare metal (Ti/Zr) melting may alter mechanical properties.

High-end welding shielding gas: Nitrogen contamination in TIG welding of stainless steel/aluminum may cause weld embrittlement.


2.Semiconductor & Electronics Manufacturing

High-purity gas monitoring: Detects trace nitrogen (ppb-level) in process gases (Ar/H₂/He) during wafer fabrication, etching, or CVD/PVD deposition to prevent device performance degradation.

Electronic specialty gas QC: Nitrogen impurity detection in gases like silane (SiH₄) or ammonia (NH₃).


3.Photovoltaics & Solar Cells

Silicon wafer production: Monitors nitrogen levels in argon shielding gas during monocrystalline/polycrystalline growth to prevent lattice structure defects.

Thin-film battery processes: Nitrogen contamination in CIGS/perovskite solar cell fabrication may cause thin-film defects.


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